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Lecturer, 7/2011 to 01/2014- Deaprtment of Electronics and Communication in NCCE, Israna (Panipat) affiliated to Kurukshetra University, Kurukshetra, Haryana.
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ASSISTANT PROFESSOR (Ad-hoc), 07/2014 to Present - Department of Electronics, Deen Dayal Upadhyaya College, University of Delhi, India.
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Publications in International Journals
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Neha, Vandana Kumari, Mridula Gupta and Manoj Saxena, “Temperature based analysis of 3-step field plate AlGaN/GaN HEMT using numerical simulation,” Advances in Natural Sciences: Nanoscience and Nanotechnology, Vol. 10, pp. 045006(7pp), October 2019, E-ISSN 2043-6262. [Impact Factor: 2.1]
DOI:https://doi.org/10.1088/2043-6254/ab4803
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Neha, Vandana Kumari, Mridula Gupta and Manoj Saxena, “TCAD- Based Optimization of Field Plate Length & Passivation Layer of AlGaN/GaN HEMT for Higher Cut-Off Frequency& Breakdown Voltage,” IETE Technical Review, Vol. 39, pp. 63-71, October 2020, ISSN 0256-4602. [Impact Factor: 2.4]
DOI: 10.1080/02564602.2020.1824624
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Neha, Vandana Kumari, Mridula Gupta and Manoj Saxena, “Investigation of proton irradiated dual field plate AlGaN/GaN HEMTs: TCAD based assessment,” Microelectronics Journal, Vol. 122, pp. 105505 (8pp), April 2022, ISSN 0959-8324. [Impact Factor: 2.2]
DOI: https://doi.org/10.1016/j.mejo.2022.105405
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Neha, Khushwant Sehra, Vandana Kumari, Mridula Gupta and Manoj Saxena, “Investigation of SiNx Passivated Dual Field Plate AlGaN/GaN HEMTs on Silicon Carbide and Sapphire Substrates Under Radiation Environment”, Silicon, May 2023, ISSN 1876-9918. [Impact Factor: 3.4]
DOI: https://link.springer.com/article/10.1007/s12633-023-02506-3
Publications in International Conference
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Neha, Vandana Kumari, Mridula Gupta and Manoj Saxena, “Simulation Based Breakdown Voltage Analysis of 3-Step Field AlGaN/GaN HEMTs”, 4th International Conference on Devices, Circuits and Systems (ICDCS-18), 16th – 17th March, 2018, Coimbatore, Tamil Nādu, India.
DOI: 10.1109/ICDCSyst.2018.8605150
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Neha, Vandana Kumari, Mridula Gupta and Manoj Saxena, “Threshold Voltage Investigation of Recessed Dual-Gate MISHEMT: Simulation Study”, 2018 IEEE Electron Device Kolkata Conference (2018 IEEE EDKCON), 24th-25th November, 2018, Kolkata, India.
DOI: 10.1109/EDKCON.2018.8770396
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Neha, Vandana Kumari, Mridula Gupta and Manoj Saxena, “Numerical Investigation of Gate Field Plate AlGaN/GaN HEMT with Multi- Recessed Buffer”, Computers and Devices for Communication (CODEC) 2019, 19th Dec – 20th December, 2019, Kolkata, India.
DOI: 10.1007/978-981-15-8366-7_76
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